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Si4435DY
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-30
––– ––– V V GS = 0V, I D = -250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
-0.019 –––
V/°C
Reference to 25°C, I D = -1mA
?
130 200 R G = 6.0 ?
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.015 0.020 V GS = -10V, I D = -8.0A ?
0.026 0.035 V GS = -4.5V, I D = -5.0A ?
––– ––– V V DS = V GS , I D = -250μA
11 ––– S V DS = -15V, I D = -8.0A
––– -10 V DS = -24V, V GS = 0V
μA
––– -10 V DS = -15V, V GS = 0V, T J = 70°C
––– -100 V GS = -20V
nA
––– 100 V GS = 20V
40 60 I D = -4.6A
7.1 ––– nC V DS = -15V
8.0 ––– V GS = -10V ?
16 24 V DD = -15V, V GS = -10V ?
76 110 I D = -1.0A
ns
90 140 R D = 15 ?
2320 ––– V GS = 0V
390 ––– pF V DS = -15V
270 ––– ? = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
–––
–––
–––
–––
-2.5
-50
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
34
33
-1.2
51
50
V
ns
nC
T J = 25°C, I S = -2.5A, V GS = 0V
T J = 25°C, I F = -2.5A
di/dt = -100A/μs ?
?
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature.
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
2
? Surface mounted on FR-4 board, t ≤ 5sec.
www.irf.com
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